Irfz46n Datasheet Pdf
This is a typical value at device. At the end of this section, a table is presented that. Drain-to-Source Breakdown Voltage.
All MOSFET. IRFZ46N Datasheet
Gate-to-Source Reverse Leakage. Rectifier utilize advanced processing techniques to achieve. Internal Source Inductance. The T O package is preferred for commercial-industrial applications where higher power levels preclude the use of T O devices.
IRFZ46N Datasheet (PDF) - International Rectifier
Part Number Start With
International Rectifier Electronic Components Datasheet. Reverse Transfer Capacitance.
Storage Temperature Range. Source-Drain Ratings and Characteristics. The T O is similar but superior to the earlier T O package because of its isolated mounting hole. Gate-to-Source Forward Leakage. This is a typical value at device destruction and represents.
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