Irfz46n Datasheet Pdf

This is a typical value at device. At the end of this section, a table is presented that. Drain-to-Source Breakdown Voltage.

All MOSFET. IRFZ46N Datasheet

Gate-to-Source Reverse Leakage. Rectifier utilize advanced processing techniques to achieve. Internal Source Inductance. The T O package is preferred for commercial-industrial applications where higher power levels preclude the use of T O devices.

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IRFZ46N Datasheet (PDF) - International Rectifier

IRFZ46N Datasheet (PDF)

The following paragraphs present a very broad overview of the failure rates per test for all packages combined. Static Drain-to-Source On-Resistance. We use Cookies to give you best experience on our website. Case-to-Sink, Flat, exportar arquivo pdf para excel Greased Surface.

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IRFZ46N Datasheet(PDF) 7 Page - International Rectifier

International Rectifier Electronic Components Datasheet. Reverse Transfer Capacitance.

Storage Temperature Range. Source-Drain Ratings and Characteristics. The T O is similar but superior to the earlier T O package because of its isolated mounting hole. Gate-to-Source Forward Leakage. This is a typical value at device destruction and represents.

IRFZ46N MOSFET Datasheet pdf - Equivalent. Cross Reference Search